FCA76N60N datasheet

Маркировка

FCA76N60N
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FCA76N60N Continuous Drain Current: 76 A Current - Continuous Drain (id) @ 25?° C: 76A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 88 S Gate Charge (qg) @ Vgs: 285nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 12385pF @ 100V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 543W Power Dissipation: 543 W Rds On (max) @ Id, Vgs: 36 mOhm @ 38A, 10V Resistance Drain-source Rds (on): 28 mOhms Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA
Количество страниц

8 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

504,36 KB